MOCVD of tungsten nitride ( WN x ) thin films from the imido complex Cl 4 ( CH 3 CN ) W ( N i Pr )
نویسندگان
چکیده
Thin films of tungsten nitride (WNx) were deposited by MOCVD from the single-source precursor Cl4(CH3CN)W(N Pr). Films were analyzed by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and cross-section scanning electron microscopy (X-SEM), while the film resistivity was determined by four-point probe. Film growth rates ranged from 10 to 27 ( A/min within a temperature range of 450–7001C. The apparent activation energy for film growth in the kinetically controlled regime was 0.84 eV. Films grown at temperatures below 5001C were amorphous, with minimum film resistivity and sheet resistance of 750 mO cm and 47O/&, respectively, occurring for deposition at 4501C. r 2002 Elsevier Science B.V. All rights reserved.
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